Paper
26 July 1999 Infrared FPA readout circuit based on current mirroring integration
Haluk Kulah, Tayfun Akin
Author Affiliations +
Abstract
This paper reports an improved Current Mirroring Integration (CMI) unit cell and a new readout structure based on it. The new structure combines the benefits of the current mirroring direct injection and switch current integration structures, satisfying the requirements for the high resolution and high performance IR FPA readouts. The improved CMI readout circuit provides very high injection efficiency, almost-zero detector bias, and large dynamic range, while it can be implemented in a small pixel area. the circuit provides a maximum charge storage capacity of 5.25 X 107 electrons and a maximum transimpedence of 6 X 107 (Omega) for a 5V power supply and a 2pF integration capacitance, which is paled outside the unit cell. The unit cell employs only nine MOS transistors and occupies an area of 20micrometers X 25 micrometers in a 0.8 micrometers CMOS process.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haluk Kulah and Tayfun Akin "Infrared FPA readout circuit based on current mirroring integration", Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); https://doi.org/10.1117/12.354578
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Capacitance

Sensors

Transistors

Staring arrays

Infrared radiation

Integrated circuit design

Integrated circuits

RELATED CONTENT

Low-power highly linear output buffer
Proceedings of SPIE (July 01 1992)
A 4 8GHz CMOS active balun using a compensated single...
Proceedings of SPIE (December 21 2007)
Millimeter-wave integrated circuit radiometers
Proceedings of SPIE (June 27 1997)
Improved architecture of IRFPA readout circuits
Proceedings of SPIE (August 13 1997)

Back to Top