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26 July 1999 Electrically tunable group delays using quantum wells in a distributed Bragg reflector
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We present an optical delay line structure incorporating InxGa1-xAs quantum wells in the GaAs quarter- wave layers of a GaAs/AlAs distributed Bragg reflector. Applying an electric field across the quantum wells shifts and broadens the e1-hh1 exciton peak via the quantum- confined Stark effect. Resultant changes in the index of refraction thereby provide a means for altering the group delay of an incident laser pulse. Theoretical results predict tunable delays on the order of 50 fs for a 30-period structure incorporating 3 quantum wells per GaAs layer. Structure design, growth and fabrication are detailed. Preliminary group delay measurements on large-area samples with no applied bias are presented.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas R. Nelson Jr., John P. Loehr, Qianghua Xie, James E. Ehret, Joseph E. Van Nostrand, Lisa Gamble, Darryl K. Jones, Spencer T. Cole, Rebecca H. Trimm, William M. Diffey, Richard Lynn Fork, and Andrew S. Keys "Electrically tunable group delays using quantum wells in a distributed Bragg reflector", Proc. SPIE 3714, Enabling Photonic Technologies for Aerospace Applications, (26 July 1999);

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