Growth and photoelectrical properties of AgInS2 crystals

B. Koscielniak-Mucha; A. Opanowicz

doi:10.1117/12.342964

24 March 1999 Growth and photoelectrical properties of AgInS₂ crystals

B. Koscielniak-Mucha, A. Opanowicz

Proceedings Volume 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications; (1999) https://doi.org/10.1117/12.342964
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

The chalcopyrite n-type AgInS₂ crystals have been grown by the Bridgman method from the melt containing stoichiometric quantities of components with 0.2% excess of In or 0.1% excess of S. The steady-state photoconductivity and photoconductivity decay have been measured from T equals 90 to 360 K. At high light intensities the photoconductivity depends sublinearly on excitation strength in a power 0.5. In this excitation strength range the decay of photoconductivity with time curves have `hyperbolic shape' which is typical for the quadratic recombination process.

Citation Download Citation

B. Koscielniak-Mucha and A. Opanowicz "Growth and photoelectrical properties of AgInS₂ crystals", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.342964

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