High-temperature electrical properties of photorefractive CdTe<Ge> crystals

P. Fochuk

doi:10.1117/12.342981

24 March 1999 High-temperature electrical properties of photorefractive CdTe<Ge> crystals

P. Fochuk

Proceedings Volume 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications; (1999) https://doi.org/10.1117/12.342981
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Measurements of high-temperature electrical properties ([e^-], (mu) , (sigma) ) were performed using Bridgman grown Ge-doped CdTe single crystals. The isothermal (873, 973, 1073 K) carrier concentration dependences under different Cd vapor pressure and temperature dependences of carrier concentration were investigated. The experimental results were compared with those for pure CdTe single crystals. The analysis of the obtained results agrees with the model of amphoteric behavior of Ge in CdTe under chosen conditions (high P_Cd value and temperature 1073 K).

Citation Download Citation

P. Fochuk "High-temperature electrical properties of photorefractive CdTe<Ge> crystals", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.342981

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available