Peculiarities of MCT ion etching in rf mercury glow discharge

Volodymyr G. Savitsky; Leonid G. Mansurov; Igor M. Fodchuk; Igor I. Izhnin; Igor S. Virt; Mariya Lozynska; Andrij V. Evdokimenko

doi:10.1117/12.344754

8 April 1999 Peculiarities of MCT ion etching in rf mercury glow discharge

Volodymyr G. Savitsky, Leonid G. Mansurov, Igor M. Fodchuk, Igor I. Izhnin, Igor S. Virt, Mariya Lozynska, Andrij V. Evdokimenko

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Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344754
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Results of complex investigations of n- and p-type Hg_1-xCd_xTe (MCT) etching in RF mercury glow discharge have been presented. Discharge was induced in quasi-closed volume. Results of technology parameter influence onto velocity of etching have been presented. It has been shown that MCT treatment by mercury ions can be carried out with etching velocity up to 30 micrometers /hour. Surface heating under these conditions slightly increases the temperature (up to 50 degree(s)C) and stoichiometry deviations are absent. It has been found that the width of disturbed layer depends on bias voltage and is smaller than 2.5 micrometers . Electrophysical parameters of n- and p-type MCT after processing have been studied. Etching of n-MCT forms the n⁺-n structure. The width of n⁺-layer corresponds to the width of disturbed zone. In the case of p-MCT, there exists inversion of conductivity type at depths exceeding those corresponding to the case of argon ions etching. It is supposed that high inversion velocity is caused by saturation of MCT surface by mercury ions during treatment.

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Volodymyr G. Savitsky, Leonid G. Mansurov, Igor M. Fodchuk, Igor I. Izhnin, Igor S. Virt, Mariya Lozynska, and Andrij V. Evdokimenko "Peculiarities of MCT ion etching in rf mercury glow discharge", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344754

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