Photosensitivity of graded-bandgap structures with interfacial recombination states

Volodymyr G. Savitsky; Bogdan S. Sokolovsky; Volodymyr K. Pysarevsky

doi:10.1117/12.344755

8 April 1999 Photosensitivity of graded-bandgap structures with interfacial recombination states

Volodymyr G. Savitsky, Bogdan S. Sokolovsky, Volodymyr K. Pysarevsky

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344755
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Influence of interfacial recombination of charge carriers on photoconductivity of graded-band-gap semiconductor structures with extrinsic type of a conductivity and linear spatial dependence of band-gap is investigated theoretically. Effects of illumination of the structures from wide band gap side by strongly absorbed monochromatic light and by polychromatic light which uniformly generates photocarriers in the sample have been analyzed. Spectral dependences of the photoconductivity of the graded-band-gap semiconductor structures illuminated by monochromatic light are shown to have pronounced minimum occurring at photon energy equal to band-gap energy at the interface. Under conditions of coordinate-independent photocarrier generation rate the influence of interfacial recombination on the graded-band-gap semiconductor structure photosensitivity displays most substantially in the case when the sample thickness is of the order of minority carrier diffusion length.

Citation Download Citation

Volodymyr G. Savitsky, Bogdan S. Sokolovsky, and Volodymyr K. Pysarevsky "Photosensitivity of graded-bandgap structures with interfacial recombination states", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344755

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