Surface properties of In(Sb,As)

Waldemar Gawron; Jaroslaw Rutkowski; Jolanta Raczynska; Krzysztof Adamiec; Waldemar Larkowski

doi:10.1117/12.344757

8 April 1999 Surface properties of In(Sb,As)

Waldemar Gawron, Jaroslaw Rutkowski, Jolanta Raczynska, Krzysztof Adamiec, Waldemar Larkowski

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344757
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

The RF magnetron sputtering growth and characteristics of ZnS and SiO₂ passivants on the surface of bulk n-type InAsSb have been reported. Our investigations include InAsSb surface preparation and in-situ pretreatment, deposition- induced surface damage, interface charge, and thermal stability. The metal-insulator-semiconductor test structures are processed and their electrical properties are measured by capacitance-voltage characteristics. The effect of sputtering growth conditions parameters (deposition temperature, pressure of argon, and RF power) is also reported. The sputtered ZnS layers exhibit excellent dielectric, insulating and mechano-chemical, as well as interface properties. The interfaces characterized by slight accumulation and small (after preservation of the thin natural oxide) hystereses are demonstrated. The SiO₂ layers have poor adherence and high density of pinholes. The samples with larger surface state densities have been observed.

Citation Download Citation

Waldemar Gawron, Jaroslaw Rutkowski, Jolanta Raczynska, Krzysztof Adamiec, and Waldemar Larkowski "Surface properties of In(Sb,As)", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344757

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