Theory of single-pulse laser amorphization of semiconductors

Vladimir I. Emel'yanov; Ivan M. Panin

doi:10.1117/12.342363

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15 March 1999 Theory of single-pulse laser amorphization of semiconductors

Vladimir I. Emel'yanov, Ivan M. Panin

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Proceedings Volume 3734, ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures; (1999) https://doi.org/10.1117/12.342363
Event: ICONO '98: Laser Spectroscopy and Optical Diagnostics: Novel Trends and Applications in Laser Chemistry, Biophysics, and Biomedicine, 1998, Moscow, Russian Federation

Abstract

The theory of amorphization under pulsed laser melting of surfaces of crystalline semiconductors, based on mechanism of point defect capture and formation of nanometer periodic defect-deformational structures, is developed. The critical defect concentration and critical solidification front velocity at exceeding of which amorphization occurs are determined. The hierarchy of structural transformations at surface after melt solidification observed with decrease of laser fluency is analytically described.

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Vladimir I. Emel'yanov and Ivan M. Panin "Theory of single-pulse laser amorphization of semiconductors", Proc. SPIE 3734, ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures, (15 March 1999); https://doi.org/10.1117/12.342363

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