Evaluation of Shipley UV5 resist for electron beam lithography

Stephen Thoms; Douglas S. Macintyre; Yifang Chen

doi:10.1117/12.346886

28 April 1999 Evaluation of Shipley UV5 resist for electron beam lithography

Stephen Thoms, Douglas S. Macintyre, Yifang Chen

Proceedings Volume 3741, Lithography for Semiconductor Manufacturing; (1999) https://doi.org/10.1117/12.346886
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

This paper describes work carried out to evaluate the performance of Shipley UV5 DUV positive tone photoresist for electron beam lithography using experimental design techniques. Factors which affect the results of resist processing have been identified by initially performing two level factorial screening test followed by detailed response surface analyses. Lines and spaces with a 120 nm period were produced using optimized conditions and there was no evidence of process delay effects over three hour periods in air. Separate batches of the resist were found to have similar optimum baking temperatures. The result obtained have been used to develop reliable techniques for the fabrication of 'T' shaped and Gamma shaped metallized gates for high frequency circuit applications. Comparisons have been made with result obtained using Shipley UV3 photoresist. We conclude that UV5 resist is a useful resist for electron beam lithography applications.

Citation Download Citation

Stephen Thoms, Douglas S. Macintyre, and Yifang Chen "Evaluation of Shipley UV5 resist for electron beam lithography", Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); https://doi.org/10.1117/12.346886

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