Recent trends and progress in deep-UV lithography

Kurt G. Ronse; Anne-Marie Goethals; Geert Vandenberghe; Mireille Maenhoudt

doi:10.1117/12.346897

28 April 1999 Recent trends and progress in deep-UV lithography

Kurt G. Ronse, Anne-Marie Goethals, Geert Vandenberghe, Mireille Maenhoudt

Author Affiliations +

Proceedings Volume 3741, Lithography for Semiconductor Manufacturing; (1999) https://doi.org/10.1117/12.346897
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

In this paper, the current status and recent progress in the field of deep UV lithography is reviewed. The introduction of resolution enhancement techniques and high NA 248nm lenses is discussed, with emphasis on their impact on intrafield linewidth control. It is expected that 248nm will be used for volume manufacturing of the 0.15 micrometers gate length devices and perhaps even pushed to the 0.13 micrometers generation. The current status of 193 nm lithography is reviewed, which is expected to be inserted at the 0.13 micrometers technology node. Based on the current situation at 248nm, the extendibility of 193nm lithography to the 100nm node is discussed.

Citation Download Citation

Kurt G. Ronse, Anne-Marie Goethals, Geert Vandenberghe, and Mireille Maenhoudt "Recent trends and progress in deep-UV lithography", Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); https://doi.org/10.1117/12.346897

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