Metal etch process defects

Ting-Yih Lu; Yuan-Ko Hwang; Chia-Hung Lai; Sen-Fu Chen; Chia-Hsiang Chen

doi:10.1117/12.346242

23 April 1999 Metal etch process defects

Ting-Yih Lu, Yuan-Ko Hwang, Chia-Hung Lai, Sen-Fu Chen, Chia-Hsiang Chen

Proceedings Volume 3742, Process and Equipment Control in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346242
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

In this paper, four major defects for metal etch process will be introduced and discussed. The defect sources related to chamber condition are identified as well. These defects are classified into four types: (1) flake type metal residue, induced by chamber polymer, (2) ball type particle, resulted from the chamber wall arcing during process, (3) on film particle, found during post-etch and photo resist strip processes, (4) metal broken, came from local arcing on wafer. All of these defects would result in metal line bridge and yield loss. In order to reduce the particle contamination, the paper proposes a protection method for chamber parts by using so called `linear' to cover most of chamber parts. The liner could adapt to chamber shape and clean easily. Experimental data shows that it can successfully reduce flake type metal residue, ball type particle. For the on film particle and metal broken, a new routine monitor method is also created.

Citation Download Citation

Ting-Yih Lu, Yuan-Ko Hwang, Chia-Hung Lai, Sen-Fu Chen, and Chia-Hsiang Chen "Metal etch process defects", Proc. SPIE 3742, Process and Equipment Control in Microelectronic Manufacturing, (23 April 1999); https://doi.org/10.1117/12.346242

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