Oxide degradation and charging damage by dry etch processing

Dumitru Gh. Ulieru

doi:10.1117/12.346921

27 April 1999 Oxide degradation and charging damage by dry etch processing

Dumitru Gh. Ulieru

Proceedings Volume 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing; (1999) https://doi.org/10.1117/12.346921
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom

Abstract

Plasma induced charging damage and oxide degradation after metal and poly etch and photoresist strip were studied using unpatterned oxide wafer technique. The time dependence of plasma induced charging, internal oxide damage oxide damage and charging 'fingerprint' were investigated for poly etch, metal etch processes. Comparison of oxide charging monitor results and SPIDER antennae structures data for photoresist strip process is presented.

Citation Download Citation

Dumitru Gh. Ulieru "Oxide degradation and charging damage by dry etch processing", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); https://doi.org/10.1117/12.346921

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