Advanced high-resolution mask processes using optical proximity correction

Y. David Chan

doi:10.1117/12.360199

25 August 1999 Advanced high-resolution mask processes using optical proximity correction

Y. David Chan

Author Affiliations +

Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360199
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan

Abstract

The benefits of incorporating some 'distortion' to the design data in order to produce the desired results on the wafers has been recognized for many years. This 'distortion' has come to be commonly referred to as optical proximity correction (OPC) by the lithography community. In today's era of high throughput laser reticle writing tools, line shortening and corner rounding has forced OPC up the lithography tree from wafer imaging to reticle imaging. With the increasing popularity of 4X systems, the comparatively large spot laser reticle writing systems in the field today need to be extended before being rendered useless for critical reticle requirements due to reticle corner rounding, line shortening and scatter bar resolution. These problems must be resolved in order to extend the use of laser tool for technology node below 0.25 micrometer. Some previous work has been done in adding corner serifs to eliminate corner rounding in contact holes. It was clear from the results that the optimal serifs sizes could be different when patterns were written on different tools. However, there is no clear understanding how the process may affect the outcome. A recent paper by W. Ziegler, et al shows the effect of adding small serifs to line ends on line end shortening based on aerial image and wafer measurement. This paper will discuss the effect of Laser Proximity correction (LPC) and the reticle manufacturing processes on pattern fidelity. CAPROX LPC^TM is used to correct for distoritons during the mask exposure. Not only will the impact of lithographic tools on OPC be discussed, but an examination of the effect of wet and dry etched processes on corner rounding, image fidelity, and line end shortening will also be presented.

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Y. David Chan "Advanced high-resolution mask processes using optical proximity correction", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360199

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KEYWORDS

Etching

Optical proximity correction

Photomasks

Reticles

Dry etching

Wet etching

Lithography

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