Paper
25 August 1999 Advancements in focused ion beam repair of MoSiON phase-shifting masks
Joshua Lessing, David C. Ferranti, Ganesh Sundaram, Ludwig Nagal, Martin Verbeek
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Abstract
As advanced photolithography moves the printable feature size from 0.25 micrometer to 0.18 micrometer various mask types are being used to improve resolution. One example is the attenuated phase shift MoSiON mask. This in turn requires the development of new mask repair techniques that provide acceptable levels of transmission and minimize phase error. In this study we present the results of opaque defect repairs on MoSiON DUV masks, utilizing a new focused ion beam (FIB) process. Opaque defects were repaired by scanning the defect area with a gallium ion beam in the presence of an etchant gas. Dose enhancement on the order of 20x was achieved, relative non-gas enhanced sputtering on the MoSiON absorber material to a non gas enhanced gas enhanced sputtering, resulting in repaired regions with excellent transmission properties, and minimal quartz damage (riverbed). The optimization of the FIB repair process is discussed and the results of post repair characterization, utilizing AIMS and AFM are presented.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joshua Lessing, David C. Ferranti, Ganesh Sundaram, Ludwig Nagal, and Martin Verbeek "Advancements in focused ion beam repair of MoSiON phase-shifting masks", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360232
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KEYWORDS
Photomasks

Opacity

Etching

Critical dimension metrology

Ion beams

Phase shifts

Quartz

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