Electron-beam lithography simulation for mask making: III. Effect of spot size, address grid, and raster writing strategies on lithography performance with PBS and ZEP-7000

Chris A. Mack

doi:10.1117/12.360238

25 August 1999 Electron-beam lithography simulation for mask making: III. Effect of spot size, address grid, and raster writing strategies on lithography performance with PBS and ZEP-7000

Chris A. Mack

Author Affiliations +

Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360238
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan

Abstract

This paper examines, from a modeling perspective, the effects of spot size, data address and raster writing strategy on lithographic performance. Both PBS, the current U.S. standard for mask making, and ZEP 7000, a new, much higher contrast material, will be examined for their impact on lithographic quality. Simulation is used to demonstrate the differences between resists, writing strategies and their implementation.

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Chris A. Mack "Electron-beam lithography simulation for mask making: III. Effect of spot size, address grid, and raster writing strategies on lithography performance with PBS and ZEP-7000", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360238

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