Enhanced pattern fidelity experiment for subquarter-micron design rule mask making

Do Yun Kim; Cheol Shin; H. S. Jung; Junsik S. Cho

doi:10.1117/12.360207

25 August 1999 Enhanced pattern fidelity experiment for subquarter-micron design rule mask making

Do Yun Kim, Cheol Shin, H. S. Jung, Junsik S. Cho

Author Affiliations +

Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360207
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan

Abstract

This paper discuss the resist profile, Resolution and the pattern fidelity of sub-micron feature in each PBS,ZEP-7000, CAR (chemical amplify resist) process that is reviewed the SEM (Scanning Electron Microscope) analysis. And it is to compare the lithographic performance of Raster scan e-beam writer (10 Kv) and Vector scan E-beam writer (50 Kv), variable shape Beam with different Electron beam resist as PBS, the most Popular Resist in many users, ZEP-7000 and CAR (Chemical amplify resist) which shows different process characteristic in Dose sensitivity, process latitude, stability.

Citation Download Citation

Do Yun Kim, Cheol Shin, H. S. Jung, and Junsik S. Cho "Enhanced pattern fidelity experiment for subquarter-micron design rule mask making", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360207

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