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25 August 1999 Fabrication of MoSiON halftone masks using ZEP7000 for MEBES 4500
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360216
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
Halftone (HT) masks are a well-accepted method of manufacturing Phase Shift Masks (PSM). Recently, investigations of the suitability of HT masks for manufacturing have shifted from contact layers to gate devices. A regular supply of MoSiON-shifter HT mask blanks was obtained for this study. The MEBES 4500 pattern generator has been used for the electron beam writing of 250 nm design rule masks. However, this writing tool has sufficient performance to use in the next generation of masks. We have investigated the fabrication of MoSiON-HT mask using MEBES 4500. In general, because MoSiON is a very low conducting material, there are issues with pattern placement errors caused by charging. This charging effect can be reduced by utilizing an electrical conducting polymer (aquaSAVE) coated on the ZEP resist surface. The resulting registration error is corrected to the same level as that of conventional chrome blanks. Moreover we manufactured KrF-HT masks with contact-type patterns using HT blanks which were coated with electrical conducing polymer on the resist surface. From the results, we determined that we could manufacture production masks without any serious issues.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuyuki Maetoko, Koji Tange, Hitoshi Fukuma, Nobuyuki Yoshioka, Susumu Kawada, Masahiko Ishizuka, Takaei Sasaki, and Charles A. Sauer "Fabrication of MoSiON halftone masks using ZEP7000 for MEBES 4500", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360216
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