Fine pattern process with negative tone resist: II

Eiichi Hoshino; Toshikatsu Minagawa; Akira Morishige; Keiji Watanabe

doi:10.1117/12.360202

25 August 1999 Fine pattern process with negative tone resist: II

Eiichi Hoshino, Toshikatsu Minagawa, Akira Morishige, Keiji Watanabe

Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360202
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan

Abstract

In polystyrene-based polymer resist process for photomask fabrication, a characteristics of its dissolution process has been investigated. The quality of the resist patterns strongly depended on polydispersivity of molecular weight in the polymer. (1) To explore this effect, the volume size of polymer, which was swelling in the developer, was determined by using the dynamic light scattering method. (2) It was found that the volume size did not only depend on the molecular weight of polymer but also the composition of developer. In this paper, the improvement of development process suited for photomask fabrication with polystyrene-based polymer is reported.

Citation Download Citation

Eiichi Hoshino, Toshikatsu Minagawa, Akira Morishige, and Keiji Watanabe "Fine pattern process with negative tone resist: II", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360202

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