ICP (inductively coupled plasma) dry etch of DUV MoSi HTPSM

Kyu-Yong Lee; Lee-Ju Kim; Kyung-Han Nam; Keuntaek Park; Y. M. Ku; S. S. Ku; I. B. Hur

doi:10.1117/12.360204

25 August 1999 ICP (inductively coupled plasma) dry etch of DUV MoSi HTPSM

Kyu-Yong Lee, Lee-Ju Kim, Kyung-Han Nam, Keuntaek Park, Y. M. Ku, S. S. Ku, I. B. Hur

Author Affiliations +

Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360204
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan

Abstract

Attenuated phase shift mask (PSM) have gained wide acceptance in the manufacturing environment during last few years with the advantage of improving DOF margin. However, etching attenuated phase shift film remains a challengeable process that affects several critical mask parameters including critical dimension, side slope and surface damage. In order to select the proper gas mixture condition, we will discuss the results of several experiments, utilizing CHF3 gas mixture, CF4/He/O2 gas mixture and SF6/He gas mixture chemistries. This paper reports the results of etching MoSi attenuated phase shifting materials using an inductively coupled plasma (ICP) system. Qz surface damage and trench for contact pattern is also reviewed as well as performance among those different gas mixture.

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Kyu-Yong Lee, Lee-Ju Kim, Kyung-Han Nam, Keuntaek Park, Y. M. Ku, S. S. Ku, and I. B. Hur "ICP (inductively coupled plasma) dry etch of DUV MoSi HTPSM", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360204

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