Interactive OPC simulator for memory devices

Hirotomo Inui; Haruo Iwasaki; Toshiyuki Ohta; Hiroyoshi Tanabe

doi:10.1117/12.360195

25 August 1999 Interactive OPC simulator for memory devices

Hirotomo Inui, Haruo Iwasaki, Toshiyuki Ohta, Hiroyoshi Tanabe

Author Affiliations +

Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360195
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan

Abstract

The practical OPC simulation system suitable for memory devices is developed with a simple threshold model considering acid diffusion in chemically amplified resists. And the resist parameter extraction method is also presented. The simulation performance is within 0.01 micrometer CD error, and within a few second computation time for 4 micrometer² area memory cell on a EWS.

Citation Download Citation

Hirotomo Inui, Haruo Iwasaki, Toshiyuki Ohta, and Hiroyoshi Tanabe "Interactive OPC simulator for memory devices", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360195

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE