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25 August 1999 Line-width verification for 0.18- and 0.25-μm design rule wafers and reticles
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999)
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
The lithography world is in transition from I-line to DUV for 0.25 micrometer and below technologies. The demand on reticle manufacturers to produce less than 30 nm CD uniformity with feature sizes of sub-micron across a full scanner field have put new challenges on inspection systems: not only do they need to find traditional Chrome type defects like extensions, intrusions and pinholes, they now need to shift a major portion of their detection schemes and algorithms on linewidth errors, including mis-sized, mis-shaped or mis-placed features. Conventional rules of 1/4 of linesize equals minimum defect specification are no longer applicable. Minimum line width variations, for instance, can have a detrimental impact on device performance. Reticle qualification needs to have an additional dimension added: on-line defect printability prediction. The ability to characterize the impact of a defect on a given feature, especially in certain variations of OPC design, will become an essential tool for mask makers and fabs alike to evaluate defects and their printability on critical device performance of a particular reticle.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shen Chung Kuo, Clare Wu, Nathan Schumann, and Wolfgang Staud "Line-width verification for 0.18- and 0.25-μm design rule wafers and reticles", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999);

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