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25 August 1999 Pattern dependence of mask topography effect in alternating phase-shifting masks
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Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360218
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
We compared the topography effect of two types of alternating PSMs; single-trench type with side etching and dual-trench type. The side etching value and dual-trench depth were adjust to give same linewidth in 0 degree and 180 degree regions for 0.2 micrometer L/S pattern. Several test patterns having different width and length were formed on these alternating PSMs. These two PSMs were evaluated by using an x4, 0.6 NA, KrF exposure tool. For longer patterns (similar to L/S pattern), pattern size differences were very small; the mask topography effect was negligible. However, pattern size differences of shorter patterns (similar to window pattern) were large with both Alt PSMs. Therefore, optimization of the side etching value or the trench depth is required for each mask pattern.
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Tadao Yasuzato, Shinji Ishida, and Hiroyoshi Tanabe "Pattern dependence of mask topography effect in alternating phase-shifting masks", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360218
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