Stencil mask fabrication for cell projection e-beam lithography with silicon wafer

Jaeseung Choi; Seung-Ho Yi; Yongkyoo Choi; Hoon Huh; Jaejeong Kim

doi:10.1117/12.360244

25 August 1999 Stencil mask fabrication for cell projection e-beam lithography with silicon wafer

Jaeseung Choi, Seung-Ho Yi, Yongkyoo Choi, Hoon Huh, Jaejeong Kim

Author Affiliations +

Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360244
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan

Abstract

Cell projection e-Beam lithography is one of the technology to increase the throughput capability, which is the demerit of conventional e-Beam lithography. In cell projection e-Beam lithography, Stencil mask fabrication is one of the most essential issue. Particularly, in fabricating stencil mask, both dry etching technique for forming aperture pattern and backside wet etching technique for forming silicon membrane are the most important technologies. With improvements in the techniques, Stencil mask that has low electric resistance compared with that made of SOI (Silicon-on-Insulator) wafer and vertical cross sectional profile is fabricated by the use of a (100) oriented silicon wafer. In addition, A device pattern of 0.13 micrometer which is sufficient for fabricating a 1G DRAM was delineated on wafer using this stencil mask.

Citation Download Citation

Jaeseung Choi, Seung-Ho Yi, Yongkyoo Choi, Hoon Huh, and Jaejeong Kim "Stencil mask fabrication for cell projection e-beam lithography with silicon wafer", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360244

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KEYWORDS

Photomasks

Silicon

Etching

Semiconducting wafers

Electron beam lithography

Wet etching

Dry etching

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