Translator Disclaimer
Paper
25 August 1999 Stencil mask fabrication for cell projection e-beam lithography with silicon wafer
Author Affiliations +
Proceedings Volume 3748, Photomask and X-Ray Mask Technology VI; (1999) https://doi.org/10.1117/12.360244
Event: Photomask and X-Ray Mask Technology VI, 1999, Yokohama, Japan
Abstract
Cell projection e-Beam lithography is one of the technology to increase the throughput capability, which is the demerit of conventional e-Beam lithography. In cell projection e-Beam lithography, Stencil mask fabrication is one of the most essential issue. Particularly, in fabricating stencil mask, both dry etching technique for forming aperture pattern and backside wet etching technique for forming silicon membrane are the most important technologies. With improvements in the techniques, Stencil mask that has low electric resistance compared with that made of SOI (Silicon-on-Insulator) wafer and vertical cross sectional profile is fabricated by the use of a (100) oriented silicon wafer. In addition, A device pattern of 0.13 micrometer which is sufficient for fabricating a 1G DRAM was delineated on wafer using this stencil mask.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaeseung Choi, Seung-Ho Yi, Yongkyoo Choi, Hoon Huh, and Jaejeong Kim "Stencil mask fabrication for cell projection e-beam lithography with silicon wafer", Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); https://doi.org/10.1117/12.360244
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Overview of SCALPEL mask technology
Proceedings of SPIE (April 23 1999)
Microstructured optical arrays for smart x-ray optics
Proceedings of SPIE (April 30 2009)
Compact integrated waveguide turning mirror in SOI
Proceedings of SPIE (April 30 2004)
Simulating the process flow of the Nikon EPL new geometry...
Proceedings of SPIE (December 06 2004)

Back to Top