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19 July 1999 Local study of a double hetero-junction laser diode by apertureless scanning near-field optical microscopy
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Proceedings Volume 3749, 18th Congress of the International Commission for Optics; (1999) https://doi.org/10.1117/12.354850
Event: ICO XVIII 18th Congress of the International Commission for Optics, 1999, San Francisco, CA, United States
Abstract
We studied locally a double hetero-junction GaAs/GaAlAs laser diode by apertureless Scanning Near-field Optical Microscopy. The optical probe used is a tungsten tip vibrating (at frequency f) perpendicularly to the emitting surface. Suitable experimental parameters permitting us to accede to near-field information have been defined. Their respective importance in the extraction of near-field information is shown and discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory Wurtz, Renaud Bachelot, and Pascal Royer "Local study of a double hetero-junction laser diode by apertureless scanning near-field optical microscopy", Proc. SPIE 3749, 18th Congress of the International Commission for Optics, (19 July 1999); https://doi.org/10.1117/12.354850
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