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19 October 1999 Radiation detector performance of CdTe single crystals grown by the conventional vertical Bridgman technique
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Abstract
The charge transport properties and radiation detector performance of semi-insulating CdTe single crystal grown by the conventional vertical Bridgman technique in this paper. The measured room-temperature electrical resistivity of the crystals is below the theoretical maximum allowed by the band gap of CdTe indicating incomplete electrical compensation of the material. The crystals show excellent spectroscopic performance in the 15 keV - 662 keV energy range, with reduced low-energy tailing in the photopeaks. The energy resolution of the best detector was 2.7 keV full width half maximum (FWHM) at 59.5 keV, 4.5 keV FWHM at 122 keV, and 20.1 keV FWHM at 662 keV. This improved performance is attributed to the improved hole transport over the typical HPB CdZnTe. The measured mobility-lifetime product of holes, (mu) (tau) h approximately equals 2.3 X 10-4 cm2/V, is significantly higher than that typical for HPB CdZnTe crystals. The measured electron (mu) (tau) e approximately equals 1.6 X 10-3 cm2/V of these CdTe crystals suggest somewhat poorer electron transport than in a spectroscopic grade HPB material.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Csaba Szeles, Elgin E. Eissler, Danny J. Reese, and Scott E. Cameron "Radiation detector performance of CdTe single crystals grown by the conventional vertical Bridgman technique", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366626
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