Optical properties of CuInSe2 film semiconductor studied with photothermal deflection spectroscopy

Mianyu Dong; Xianfeng Chen; Hui Deng

doi:10.1117/12.367560

11 October 1999 Optical properties of CuInSe2 film semiconductor studied with photothermal deflection spectroscopy

Mianyu Dong, Xianfeng Chen, Hui Deng

Proceedings Volume 3789, Solar Optical Materials XVI; (1999) https://doi.org/10.1117/12.367560
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

Photothermal deflection spectroscopy is used to investigate the optical properties of CuInSe₂ thin film semiconductors, which are different in composition and technical preparation conditions. It is found in the experiment that absorption coefficient and direct band gap of the samples can be changed under the control of substrate temperature and proportion of [Cu]/[In], which agrees with the reported results by other methods.

Citation Download Citation

Mianyu Dong, Xianfeng Chen, and Hui Deng "Optical properties of CuInSe2 film semiconductor studied with photothermal deflection spectroscopy", Proc. SPIE 3789, Solar Optical Materials XVI, (11 October 1999); https://doi.org/10.1117/12.367560

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