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30 June 1999 Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications
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Abstract
Heterostructures formed from III-V semiconductors with the 6.1 angstroms lattice spacing (InAs, GaSb, AlSb and related alloys) have attracted significant interest because of their potential to define a new `state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 angstroms-based devices which have the potential to revolutionize infrared optoelectronics and low-power, high- speed electronics.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamin V. Shanabrook, W. Barvosa-Carter, Robert Bass, Brian Robert Bennett, J. Brad Boos, William W. Bewley, Allan S. Bracker, James C. Culbertson, E. R. Glaser, Walter Kruppa, R. Magno, W. J. Moore, Jerry R. Meyer, B. Z. Nosho, Doewon Park, P. M. Thibado, M. E. Twigg, R. J. Wagner, James R. Waterman, Lloyd J. Whitman, and Ming Jey Yang "Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications", Proc. SPIE 3790, Engineered Nanostructural Films and Materials, (30 June 1999); https://doi.org/10.1117/12.351249
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