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26 October 1999 Intermixing-induced tunability in infrared-emitting InGaAs/GaAs quantum dots
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Abstract
The effects of intermixing on the radiative emission from InGaAs/GaAs quantum dot (QD) structures with excited state luminescence are presented. Thermally induced compositional disordering of the InGaAs/GaAs interface had been used to blue-shift all peaks and tune their intersublevel energy spacings ((Delta) E[(i+1 - i]). The inhomogeneously broadened photoluminescence (PL) peaks narrowed. The intersublevel spacings (Delta) E[(i+1 - i] were reduced and could be tuned continuously for values of (Delta) E[(i+1 - i] greater, similar and lower than the LO phonon energies in InAs and GaAs. Experiments and calculations of interdiffusion in InGaAs/GaAs quantum wells of the same ternary composition determined values for activation energies and diffusivities. These established values for diffusion lengths corresponding to the observed blue shifts and reduction of (Delta) E[i+1 - i] with annealing temperature. Rate equation simulations of our experimentally obtained PL spectra were used to estimate relaxation lifetime ratios for intersublevel transitions. A slight trend towards increasing thermalization rates at values (Delta) E[(i+1 - i] approximately LO phonon energies was found. However, PL measurements showed strong emission from excited states for all (Delta) ELB(i+1 - i] values, which ranged from 53 to 25 meV.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rosa Leon "Intermixing-induced tunability in infrared-emitting InGaAs/GaAs quantum dots", Proc. SPIE 3794, Materials and Electronics for High-Speed and Infrared Detectors, (26 October 1999); https://doi.org/10.1117/12.366743
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