Comparison of device performance using various metal quinolates as the host for a guest-host active layer

Lisa A. Crisafulli; Hideyuki Murata; Charles D. Merritt; Zakya H. Kafafi

doi:10.1117/12.372740

17 December 1999 Comparison of device performance using various metal quinolates as the host for a guest-host active layer

Lisa A. Crisafulli, Hideyuki Murata, Charles D. Merritt, Zakya H. Kafafi

Author Affiliations +

Proceedings Volume 3797, Organic Light-Emitting Materials and Devices III; (1999) https://doi.org/10.1117/12.372740
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

We present a study that focuses on a comparison of the absolute photoluminescence quantum efficiency ((phi) _pl) with the electroluminescence quantum efficiency ((eta) _el) using a guest-host active layer. We also report the luminous power efficiency of devices based on this same emissive layer. The active layer consists of a series of metal quinolates used as the host for the dopant rubrene. We find that rubrene doping enhances the (phi) _pl of the metal quinolate host materials, tris(8-hydroxyquinolinato) gallium III (Gaq₃), tris(8-hydroxyquinolinato) aluminum III (Alq₃), and tris(4-methyl-8-hydroxyquinolinato) aluminum III (Almq₃), from 0.13, 0.25, and 0.42, respectively, to approximately 1.0 for all metal quinolates. This is achieved by efficient Forster energy transfer from host to guest molecules. We also find that doping enhances the (eta) _el of devices using Gaq₃ or Alq₃ as the active layer from 0.6% and 1.0%, respectively, to 2.2% for both hosts when measured at a current density of 100 A/m². The (eta) _el of devices based on Almq₃ increases from 1.6% to 2.9% upon doping with rubrene. At a brightness of 100 cd/m², the luminous power efficiency of devices based on the metal quinolates increases from 1.0 lm/W, 0.99 lm/W, and 2.1 lm/W to 3.6 lm/W, 4.0 lm/W, and 3.8 lm/W for Gaq₃, Alq₃, and Almq₃, respectively, when doped with an optimized concentration of rubrene. These enhancements are attributed to carrier trapping followed by direct recombination on the rubrene dopant as well as efficient energy transfer from the host to rubrene.

Citation Download Citation

Lisa A. Crisafulli, Hideyuki Murata, Charles D. Merritt, and Zakya H. Kafafi "Comparison of device performance using various metal quinolates as the host for a guest-host active layer", Proc. SPIE 3797, Organic Light-Emitting Materials and Devices III, (17 December 1999); https://doi.org/10.1117/12.372740

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Metals

Doping

Luminous efficiency

Quantum efficiency

Electroluminescence

Control systems

Luminescence

Show All Keywords

Keywords/Phrases

Search In:

Publication Years