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17 December 1999 Transient studies of deep traps in electroluminescent polymers
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Abstract
Charge trapping will have a strong effect on the performance of organic light emitting diodes. Here different models for such trapping in disordered organic semiconductors are presented. The benefits of different transient experimental techniques are explored. Results are presented for electroluminescent polymer diodes which are fully depleted or contain a depletion region type Schottky barrier. The transient behavior can be explained by a single energy trap site emptying to a Gaussian distribution of transport sites.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alasdair J. Campbell and Donal D. C. Bradley "Transient studies of deep traps in electroluminescent polymers", Proc. SPIE 3797, Organic Light-Emitting Materials and Devices III, (17 December 1999); https://doi.org/10.1117/12.372727
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