CW-harmonic power generation of GaAs-IMPATT diodes above 200 GHz

Hans-Dieter Viktor Boehm; Juergen Freyer; M. Claassen

doi:10.1117/12.361020

9 September 1999 CW-harmonic power generation of GaAs-IMPATT diodes above 200 GHz

Hans-Dieter Viktor Boehm, Juergen Freyer, M. Claassen

Proceedings Volume 3828, Terahertz Spectroscopy and Applications II; (1999) https://doi.org/10.1117/12.361020
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany

Abstract

Cw-power generation from fundamental mode GaAs-IMPATT didoes is presently limited to frequencies well below 200 GHz. This restriction follows mainly from the losses in diode and resonator which exceed the negative resistance of the diode at elevated frequencies. However, the strong non-linearities of IMPATT diodes can successfully be used for harmonic mode operation to achieve rf-output power well above 200 GHz. For harmonic mode operation,the active device must be incorporated in a resonator which is terminated reactively at the fundamental frequency and on the other hand should be power matched at the harmonic frequency. The reactive termination of the fundamental wave can easily be achieved by a waveguide section with appropriate cut-off frequency. Matching at the harmonic frequency is aspired by the resonator geometry and a sliding short. The initial material for the applied GaAs-IMPATT diodes is grown by MBE technique. The devices are mounted on diamond heat sinks with extremely low parasitics to avoid additional losses. Experimental results are given for GaAs double-drift IMPATT devices above 200 GHz with 2 mW at 232 GHz and 1 mW at 242 GHz as best results. The experimental data are compared to theoretical simulations of both active device and applied resonator.

Citation Download Citation

Hans-Dieter Viktor Boehm, Juergen Freyer, and M. Claassen "CW-harmonic power generation of GaAs-IMPATT diodes above 200 GHz", Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); https://doi.org/10.1117/12.361020

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