Highly nonlinear capacitance in quantum well/barrier heterostructures: application to harmonic multiplication at terahertz frequency

V. Duez; Mohamed Henini; O. Vanbesien; J. Martyn Chamberlain; D. Lippens

doi:10.1117/12.361023

9 September 1999 Highly nonlinear capacitance in quantum well/barrier heterostructures: application to harmonic multiplication at terahertz frequency

V. Duez, Mohamed Henini, O. Vanbesien, J. Martyn Chamberlain, D. Lippens

Author Affiliations +

Proceedings Volume 3828, Terahertz Spectroscopy and Applications II; (1999) https://doi.org/10.1117/12.361023
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany

Abstract

In this communication, we report on the design and the fabrication of quantum well barrier varactor structures with state of the art results in terms of capacitance ratio over a narrow voltage range. Basically, the fact to consider is a barrier cladded by two quantum wells with respect to a single barrier heterostructure. It has several consequences for the non linear character of the device. The capacitance mechanism is governed at low voltage by the electron population rates off the quantum well rather than the conventional depletion mode process. A true band gap capacitance engineering is here demonstrated with thee kinds of structures either in the InP material system with a InGaAs/InAs/AlAs heterostructure or in the GaAs material system with GaAs/InGaAs/AlAs pseudomorphic epilayers and lattice matched AlGaAs/GaAs/AlAs heterojunctions. Self- consistent simulations, based on the solution of Poisson and Schroedinger coupled equations system, were performed in order to calculate the electron wave function and the conduction band bending. High capacitance ratios can be predicted depending on material parameters and structure geometry. Test samples were then fabricated and rf tested. The devices very high capacitance ratios is excess of 5 to 1 over a 1 Volt range.

Citation Download Citation

V. Duez, Mohamed Henini, O. Vanbesien, J. Martyn Chamberlain, and D. Lippens "Highly nonlinear capacitance in quantum well/barrier heterostructures: application to harmonic multiplication at terahertz frequency", Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); https://doi.org/10.1117/12.361023

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Capacitance

Heterojunctions

Gallium arsenide

Quantum wells

Aluminum

Indium arsenide

Indium gallium arsenide

Show All Keywords

Keywords/Phrases

Search In:

Publication Years