I-V characteristics of K(Ta0.65Nb0.35)O3 thin film prepared by pulsed laser

Duanming Zhang; Weidong Ma; Xiaodong Wang; Zhongjun Chen; Desheng Xu; Ping Zheng; Mintao Huang; Meijun Zhang; Zhihua Li

doi:10.1117/12.361121

8 September 1999 I-V characteristics of K(Ta_0.65Nb_0.35)O3 thin film prepared by pulsed laser

Duanming Zhang, Weidong Ma, Xiaodong Wang, Zhongjun Chen, Desheng Xu, Ping Zheng, Mintao Huang, Meijun Zhang, Zhihua Li

Proceedings Volume 3862, 1999 International Conference on Industrial Lasers; (1999) https://doi.org/10.1117/12.361121
Event: International Symposium on Industrial Lasers, 1999, Wuhan, China

Abstract

The I-V characteristics of K(Ta_0.65Nb_0.35)O₃ thin films being prepared by PLD method on Si(100) were found to be Ohmic at low fields and space-charge-limited at higher fields, and this phenomena was correctly explained by SCLC theory.

Citation Download Citation

Duanming Zhang, Weidong Ma, Xiaodong Wang, Zhongjun Chen, Desheng Xu, Ping Zheng, Mintao Huang, Meijun Zhang, and Zhihua Li "I-V characteristics of K(Ta_0.65Nb_0.35)O3 thin film prepared by pulsed laser", Proc. SPIE 3862, 1999 International Conference on Industrial Lasers, (8 September 1999); https://doi.org/10.1117/12.361121

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