Laser-induced damage threshold of thin film in a gas chamber

Feng Huang; Qihong Lou; Hongyi Gao; Jinxing Dong; Yunrong Wei

doi:10.1117/12.361204

8 September 1999 Laser-induced damage threshold of thin film in a gas chamber

Feng Huang, Qihong Lou, Hongyi Gao, Jinxing Dong, Yunrong Wei

Proceedings Volume 3862, 1999 International Conference on Industrial Lasers; (1999) https://doi.org/10.1117/12.361204
Event: International Symposium on Industrial Lasers, 1999, Wuhan, China

Abstract

The damage threshold of ZrO₂/SiO₂ and HfO₂/SiO₂ thin films was investigated in gas chamber (with oxygen gas, air, helium gas or vacuum condition) by using a scattering detector system. The experimental results show that the damage threshold is increased about 20% in oxygen gas ambient. The mechanism of these phenomena is discussed.

Citation Download Citation

Feng Huang, Qihong Lou, Hongyi Gao, Jinxing Dong, and Yunrong Wei "Laser-induced damage threshold of thin film in a gas chamber", Proc. SPIE 3862, 1999 International Conference on Industrial Lasers, (8 September 1999); https://doi.org/10.1117/12.361204

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