Modeling of excimer-laser direct-projection deep etching of photoresist and its application

Beijun Shen; Runwen Wang

doi:10.1117/12.361104

8 September 1999 Modeling of excimer-laser direct-projection deep etching of photoresist and its application

Beijun Shen, Runwen Wang

Proceedings Volume 3862, 1999 International Conference on Industrial Lasers; (1999) https://doi.org/10.1117/12.361104
Event: International Symposium on Industrial Lasers, 1999, Wuhan, China

Abstract

A model of laser projection ablation for micropatterning on polymers is established by analyzing the optical imaging features and the UV laser interaction with polymers. This model is applied to explain the experimental phenomenon such as ablated pattern size stability and the taper angle of pattern edge successfully.

Citation Download Citation

Beijun Shen and Runwen Wang "Modeling of excimer-laser direct-projection deep etching of photoresist and its application", Proc. SPIE 3862, 1999 International Conference on Industrial Lasers, (8 September 1999); https://doi.org/10.1117/12.361104

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