Translator Disclaimer
28 December 1999 Temperature dependence of quantum well infrared photodetector focal plane array characteristics
Author Affiliations +
We investigated the operation temperature dependence of the characteristics of quantum-well infrared photodetector focal plane arrays (QWIP-FPAs) for the 8 - 10 micrometer wavelength region from 65 K to 80 K. We found that a proposed simple circuit model explains the temperature dependence of the DC output and signal intensity of the QWIP-FPA. In this model, we used empirical current-voltage (I-V) characteristics of the QWIP, which was not hybridized with the readout integrated circuit (called 'QWIP itself'), measured at various temperatures and a simplified equivalent circuit model. The signal intensity of the QWIP-FPAs decreases as the temperature increases, while the photo-current of the QWIP itself increases slightly as the temperature increases. The difference between these behaviors is because the bias applied to QWIP in QWIP-FPA varies during the integration cycle and the bias applied to QWIP itself is constant. The noise equivalent temperature difference (NETD) increases from 0.10 K to 0.20 K as the operation temperature increases from 65 K to 80 K, since the signal intensity decreases and the shot noise increases with increasing the dark current.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoichiro Sakachi, Hironori Nishino, Prafulla J. Masalkar, Yoshihiro Miyamoto, and Toshio Fujii "Temperature dependence of quantum well infrared photodetector focal plane array characteristics", Proc. SPIE 3870, Sensors, Systems, and Next-Generation Satellites III, (28 December 1999);

Back to Top