Translator Disclaimer
Paper
30 December 1999 Masking materials for 157-nm lithography
Author Affiliations +
Abstract
Constraints of the photomask are beginning to play dominate roles in the advancement of new microlithographic technology. Mask substrate materials are being explored by several groups. In this work, we explore the thin film masking layers themselves and identify potential solutions for binary and phase-shift masking films for use at 157 nm. The chromium based absorbing films used for binary masking are likely to meet the required needs. Modification of the composition will be required. Attenuated phase shift masking films become challenging as few transparent host thin film materials exist at the 157 nm wavelength.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruce W. Smith, Anatoly Bourov, Matthew Lassiter, and Michael J. Cangemi "Masking materials for 157-nm lithography", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373337
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Quartz 9 inch size mask blanks for ArF PSM (Phase...
Proceedings of SPIE (July 13 2017)
Photomask development for 90-nm technology
Proceedings of SPIE (January 27 2005)
Mask modeling in the low k1 and ultrahigh NA regime...
Proceedings of SPIE (June 16 2005)
DUV inspection capability for 90 nm node mask in ArF...
Proceedings of SPIE (December 17 2003)

Back to Top