Modeling of optical constants of materials comprising photolithographic masks in the VUV

Dale A. Harrison; John C. Lam; George G. Li; A. Rahim Forouhi; Giang T. Dao

doi:10.1117/12.373379

30 December 1999 Modeling of optical constants of materials comprising photolithographic masks in the VUV

Dale A. Harrison, John C. Lam, George G. Li, A. Rahim Forouhi, Giang T. Dao

Proceedings Volume 3873, 19th Annual Symposium on Photomask Technology; (1999) https://doi.org/10.1117/12.373379
Event: Photomask Technology and Management, 1999, Monterey, CA, United States

Abstract

The optical properties of materials comprising photolithographic masks are investigated at wavelengths covering the vacuum-ultra-violet (VUV) to the near-infra-red (NIR). Broadband reflectance (R) and transmittance (T) spectra from 130 to 1000-nm are obtained from a variety of single layer absorber and bi-layer absorber/anti-reflection coating (ARC) samples deposited on MgF₂ and CaF₂ substrates. These experimental data are analyzed using the Forouhi-Bloomer (F-B) dispersion equations, in conjunction with a least squares fitting algorithm, to infer the thickness and n and k spectra of the materials under investigation. Once determined, the optical properties of the component materials are used to calculate the optical density of the single layer absorbers at 157-nm. These preliminary calculations are performed to investigate the feasibility of extending the use of traditional mask materials to wavelengths below 193-nm. In addition, theoretical swing-curve and standing wave functions are predicted for a mask structure based on the CrO_xN_y/Cr material system.

Citation Download Citation

Dale A. Harrison, John C. Lam, George G. Li, A. Rahim Forouhi, and Giang T. Dao "Modeling of optical constants of materials comprising photolithographic masks in the VUV", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373379

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