Sub-0.18-um line/space lithography using 248-nm scanners and assisting feature OPC masks

Huitzu Lin; John C.H. Lin; Ching Siun Chiu; Ying-Ying Wang; Anthony Yen

doi:10.1117/12.373326

30 December 1999 Sub-0.18-μm line/space lithography using 248-nm scanners and assisting feature OPC masks

Huitzu Lin, John C.H. Lin, Ching Siun Chiu, Ying-Ying Wang, Anthony Yen

Proceedings Volume 3873, 19th Annual Symposium on Photomask Technology; (1999) https://doi.org/10.1117/12.373326
Event: Photomask Technology and Management, 1999, Monterey, CA, United States

Abstract

The downscaling of critical dimensions (CD) in semiconductor circuits has been pushing photolithography to print features below the wavelength of the light source. However, severe proximity effect and small DOF for isolated lines have brought challenges to sub-0.18 micrometer lithography in manufacturing using 248 nm scanners. To improve proximity effect and DOF for isolated lines, assisting features (AF) on masks are considered. However, the practical application of this technique has been limited because of difficulties in mask fabrication. In this paper, we discuss items that concern both photolithographers and mask-makers as AF is applied in manufacturing. These items include mask error factor (MEF), depth of focus (DOF) improvement, AF line width control, lithographic impact caused by the drift of the mean value of mask CD, defect printability in resist, and defect sensitivity during mask inspection.

Citation Download Citation

Huitzu Lin, John C.H. Lin, Ching Siun Chiu, Ying-Ying Wang, and Anthony Yen "Sub-0.18-μm line/space lithography using 248-nm scanners and assisting feature OPC masks", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373326

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