Mechanical properties of boron-doped single-crystal silicon microstructures

Michael W. Putty; Shih-Chia Chang

doi:10.1117/12.361222

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30 August 1999 Mechanical properties of boron-doped single-crystal silicon microstructures

Michael W. Putty, Shih-Chia Chang

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Proceedings Volume 3874, Micromachining and Microfabrication Process Technology V; (1999) https://doi.org/10.1117/12.361222
Event: Symposium on Micromachining and Microfabrication, 1999, Santa Clara, CA, United States

Abstract

High aspect ratio single crystal silicon resonant beams oriented with angles of 0, 11.25, 22.5, 33.75, and 45 degrees to the Si 100 direction were fabricated by using high density plasma etching and dissolved wafer techniques. The silicon was doped with boron with a concentration of >= 5 X 10¹⁹ cm^-3. The moduli of elasticity of the boron doped silicon were calculated from the measured resonant frequencies of the fabricated cantilever beams. They were approximately 1.56, 1.60, 1.66, 1.81 and 1.92 X 10¹² dyne/cm² with respect to the five different orientations mentioned above. These values are smaller than those calculated theoretically for intrinsic single crystal silicon. The built-in stresses in the clamped-clamped bridges were also found to be orientations. The stress variation is attributed to the variation of the modulus of elasticity and the difference in thermal expansion coefficients between silicon and the glass substrate to which the beam anchors are bonded.

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Michael W. Putty and Shih-Chia Chang "Mechanical properties of boron-doped single-crystal silicon microstructures", Proc. SPIE 3874, Micromachining and Microfabrication Process Technology V, (30 August 1999); https://doi.org/10.1117/12.361222

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