New design methodologies in (111)-oriented silicon wafers

R. Edwin Oosterbroek; J. W. Berenschot; A. J. Nijdam; Gregory Pandraud; Miko C. Elwenspoek; Albert van den Berg

doi:10.1117/12.361243

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30 August 1999 New design methodologies in (111)-oriented silicon wafers

R. Edwin Oosterbroek, J. W. Berenschot, A. J. Nijdam, Gregory Pandraud, Miko C. Elwenspoek, Albert van den Berg

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Proceedings Volume 3874, Micromachining and Microfabrication Process Technology V; (1999) https://doi.org/10.1117/12.361243
Event: Symposium on Micromachining and Microfabrication, 1999, Santa Clara, CA, United States

Abstract

New methodologies in anisotropic wet-chemical etching of oriented silicon allowing useful process designs combined with smart mask-to crystal-orientation-alignment are presented. The described methods yield smooth, etch-step free surfaces as well as high-quality plan-parallel beams and membranes. With a combination of pre-etching at different depths and passivation steps, structures can be etched at different levels in a wafer. Design rules using the < 100 >-crystal orientation, supplemented with examples demonstrate the high potential of using < 100 > oriented wafers in microsystem design.

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R. Edwin Oosterbroek, J. W. Berenschot, A. J. Nijdam, Gregory Pandraud, Miko C. Elwenspoek, and Albert van den Berg "New design methodologies in (111)-oriented silicon wafers", Proc. SPIE 3874, Micromachining and Microfabrication Process Technology V, (30 August 1999); https://doi.org/10.1117/12.361243

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