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An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of boron atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm2 and 30-150 keV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 1018 cm-3.
Andrej P. Kokhanenko,Aleksander G. Korotaev,Aleksander V. Voitsekhovskii,Ivan Grushin,Mikhail S. Opekunov, andGennady E. Remnev
"Formation of heavily boron-doped nanolayer in silicon by powerful ion irradiation", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360564
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Andrej P. Kokhanenko, Aleksander G. Korotaev, Aleksander V. Voitsekhovskii, Ivan Grushin, Mikhail S. Opekunov, Gennady E. Remnev, "Formation of heavily boron-doped nanolayer in silicon by powerful ion irradiation," Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360564