High-resolution tracing method for monitoring metal contaminants in silicon device manufacturing processes

Hirofumi Shimizu; Shuichi Ishiwari

doi:10.1117/12.361334

27 August 1999 High-resolution tracing method for monitoring metal contaminants in silicon device manufacturing processes

Hirofumi Shimizu, Shuichi Ishiwari

Author Affiliations +

Proceedings Volume 3884, In-Line Methods and Monitors for Process and Yield Improvement; (1999) https://doi.org/10.1117/12.361334
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

An extraction method of micro-contaminants detrimental for silicon (Si) devices and its impact on clean technology are elaborated to focus on upgrading device performances. Deleterious metal impurities on wafer surfaces such as Fe, Cu, Ni and Al are analyzed using an improved pack extraction method (PEM), in which sample wafers were enclosed in a cleaned teflon bag with aqueous acid solutions. Upon the extraction of impurities, three types of solutions [(I) HCl/H₂O, (II) HF/H₂O and (III) HF/HNO₃/H₂O], were successively replaced one after another in the cleaned teflon bag, resulting in measuring impurities on oxide surfaces, oxides and SiO₂-Si interfaces, separately. The monitoring of these harmful impurities helps feed back to reduce the impurities in device manufacturing processes.

Citation Download Citation

Hirofumi Shimizu and Shuichi Ishiwari "High-resolution tracing method for monitoring metal contaminants in silicon device manufacturing processes", Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); https://doi.org/10.1117/12.361334

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