Paper
27 August 1999 Online characterization of HSG polysilicon by AFM
Larry M. Ge, M. A. el-Hamdi, Roger Alvis, S. Sawaya, David Gifford, Rafael Lainez, L. Hendrix
Author Affiliations +
Abstract
Automated AFM (Atomic Force Microscope) has been used to characterize the structure of the HSG (hemi-spherical grain) polysilicon film. The structure characterization parameters such as the surface roughness, the grain size and density of the storage polysilicon were returned by AFM. In this paper we carried out designed experiments and characterized HSG samples with variant growth temperatures and doping densities. We compare the new AFM technique and the conventional optical reflectivity and SEM techniques. The results show that AFM data has a strong correlation with the electric response of the DRAM devices while the optical reflectivity and SEM measurements show weak or no correlation. Among the many data analysis performed by the AFM software, kurtosis and skewness were found to be valuable parameters for the optimization and control of both capacitance and ONO BV (breakdown voltage) of the DRAM devices.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larry M. Ge, M. A. el-Hamdi, Roger Alvis, S. Sawaya, David Gifford, Rafael Lainez, and L. Hendrix "Online characterization of HSG polysilicon by AFM", Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); https://doi.org/10.1117/12.361340
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KEYWORDS
Atomic force microscopy

Scanning electron microscopy

Capacitance

Reflectivity

Doping

Curium

Manufacturing

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