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1 February 2000 Ablation process induced by high-energy radiation
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Proceedings Volume 3885, High-Power Laser Ablation II; (2000) https://doi.org/10.1117/12.376999
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan
Abstract
The absorption coefficient of silicon carbide plasmas was calculated at temperatures 5,000 K and 7,000 K, thickness from 0.0 mm to 7.5 mm, and pressure from 0.1 MPa to 1.0 MPa. The silicon carbide plasmas were assumed to be isothermal and in local thermodynamic equilibrium. The radiations included molecular bands, atomic lines, and continuum processes. It was found that silicon carbide ablation materials were effective in reducing the radiative flux.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masato Funatsu and Koichi Kasuya "Ablation process induced by high-energy radiation", Proc. SPIE 3885, High-Power Laser Ablation II, (1 February 2000); https://doi.org/10.1117/12.376999
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