Laser-induced damage threshold and laser processing of GaN

Hong-Bo Sun; Saulius Juodkazis; Petr Georgievich Eliseev; Tamoya Sugahara; Tao Wang; Shigeki Matsuo; Shiro Sakai; Hiroaki Misawa

doi:10.1117/12.376976

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1 February 2000 Laser-induced damage threshold and laser processing of GaN

Hong-Bo Sun, Saulius Juodkazis, Petr Georgievich Eliseev, Tamoya Sugahara, Tao Wang, Shigeki Matsuo, Shiro Sakai, Hiroaki Misawa

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Proceedings Volume 3885, High-Power Laser Ablation II; (2000) https://doi.org/10.1117/12.376976
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan

Abstract

The single-shot pulse laser-induced damaging thresholds (LIDTs), an important laser-optical constant of GaN material, were determined to approximately 34 and 65 nJ upon the irradiation of 400 and 800 nm wavelengths, 150 fs duration laser pulse focused by 40X magnification of dry objective lens (a lateral size of focal spot roughly at 1.22 (lambda) /NA, where NA equals 0.65). The critical energy of sub- threshold pulses was determined for multi-shot optical damaging. The factors that influenced the LIDTs, optical properties of damaged GaN material and the possibility of laser processing of nitride devices were also discussed.

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Hong-Bo Sun, Saulius Juodkazis, Petr Georgievich Eliseev, Tamoya Sugahara, Tao Wang, Shigeki Matsuo, Shiro Sakai, and Hiroaki Misawa "Laser-induced damage threshold and laser processing of GaN", Proc. SPIE 3885, High-Power Laser Ablation II, (1 February 2000); https://doi.org/10.1117/12.376976

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