Currents in Hg1-xCdxTe photodiodes

Joanna V. Gumenjuk-Sichevskaya; Fiodor F. Sizov

doi:10.1117/12.368344

4 November 1999 Currents in Hg_1-xCd_xTe photodiodes

Joanna V. Gumenjuk-Sichevskaya, Fiodor F. Sizov

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368344
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

Carrier transport mechanisms in Hg_1-xCd_xTe photodiodes in the temperature range 70 divided by 150 K are discussed. Two major current mechanisms were included into balance equations of the p-n-junction: trap-assisted tunneling (TAT) and Schockley-Reed-Hall generation- recombination processes. For TAT Anderson's matrix element of the impurity ionization was used and the tunneling rate characteristics were calculated in the k-p approximation with the constant barrier field.Other current mechanism were included in consideration as additive contributions. Using donor and acceptor concentrations, trap level concentration, trap level energy, and in-junction trap level lifetimes as fitting parameters, we obtain a relatively good agreement with experimental data.

Citation Download Citation

Joanna V. Gumenjuk-Sichevskaya and Fiodor F. Sizov "Currents in Hg_1-xCd_xTe photodiodes", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368344

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