Electrochemical process of n-Si photonic structure formation

Lyudmila A. Karachevtseva; Oleq A. Lytvynenko; Elza A. Malovichko

doi:10.1117/12.368400

4 November 1999 Electrochemical process of n-Si photonic structure formation

Lyudmila A. Karachevtseva, Oleq A. Lytvynenko, Elza A. Malovichko

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368400
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

Electrochemical process of the n-Si macroporous photonic structure formation has been investigated. The stationary distribution of the nonequilibrium hole concentration through the depth of n-Si plates after the intrinsic backside illumination was calculated. The light intensity and the electrical field regimes were determined for the macropore formation with the constant hole concentration on the tips. The stationary current regime is not equal to the electrochemical process stability. It was found that the stabilization of the hole concentration due to the light intensity change is more effective relatively the electrical field variation. The hole concentration stability and the cylindrical pore formation are possible for the high photosensitive samples only.

Citation Download Citation

Lyudmila A. Karachevtseva, Oleq A. Lytvynenko, and Elza A. Malovichko "Electrochemical process of n-Si photonic structure formation", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368400

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