Key issues in substrate and liquid phase epitaxy of Hg1-xCdxTe from Hg-rich and Te-rich solutions

S. C. Gupta

doi:10.1117/12.368392

4 November 1999 Key issues in substrate and liquid phase epitaxy of Hg_1-xCd_xTe from Hg-rich and Te-rich solutions

S. C. Gupta

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368392
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

In this paper we review the key issues in CdTe substrate which influence the quality of mercury cadmium telluride epilayer grown by liquid phase epitaxy. The issues are crystallinity, defects such as tellurium precipitates and impurities. We discuss the conditions to grow good quality epilayers of Hg_1-xCd_xTe from Hg-rich and Te-rich solutions at 470 degrees C. The physical parameters such as surface morphology, composition, thickness, x-ray full width at half maximum and broadening parameter from electrolyte electroreflectance obtained in two cases are compared. It is shown that epilayers grown form Hg-rich solution have, better surface morphology, lower growth rate and crystallinity and broadening parameter similar to layers grown form Te-rich solution. Compositionally epilayers grown form Te-rich solution are more uniform. The quality of an epilayer grown form Te-rich solution deteriorates faster than grown from Hg-rich solution when the cooling rate is increased in excess of 2 degrees C/h.

Citation Download Citation

S. C. Gupta "Key issues in substrate and liquid phase epitaxy of Hg_1-xCd_xTe from Hg-rich and Te-rich solutions", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368392

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